View MAX8877-30D_6707543.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology product data supersedes data of 2003 may 14 2003 aug 08 integrated circuits
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2 2003 aug 08 general description the max8877/max8878-xx family are very low-noise, very low-dropout, low quiescent-current linear regulators designed for battery-powered applications, although they can also be used for devices powered by ac-dc converters. the parts are available in a range of preset output voltages from 2.5 v to 4.5 v. typical dropout voltages are only 165 mv at 150 ma, and 41 mv at 50 ma. reverse battery current is extremely low, 0.5 m a typ. for demanding applications, output noise voltage of typically 30 m v rms is achieved with a 0.01 m f capacitor on the bypass pin. the input voltage can vary from 2.5 v dc to 6.5 v dc , providing up to 150 ma output current. an internal p-channel fet pass transistor maintains an 85 m a typical supply current, independent of the load current and dropout voltage. other features include a 0.01 m a logic-controlled shutdown, short circuit and thermal shutdown protection, and reverse battery protection. the max8878 also includes an auto-discharge function which actively discharges the output voltage to ground when the device is placed in shutdown. to accommodate high density layouts, it is packaged in the 5-pin sot23-5 and wafer-level chip-scale package (wl-csp). wl-csp5 (bottom view) so5 (sot23-5) features ? low output noise: 30 m v rms ? low dropout voltages: 165 mv at 150 ma; 41 mv at 50 ma ? thermal overload and short circuit protection ? reverse battery protection ? output current limit ? 85 m a no-load supply current ? 100 m a typical operating supply current at i out = 150 ma ? preset output voltage of 2.5 v, 2.6 v, 2.7 v, 2.8 v, 3.0 v, 3.3 v, 3.6 v, 4.2 v and 4.5 v; other voltages upon request in 100 mv increments applications ? cordless, pcs, and cellular telephones ? pcmcia cards and modems ? handheld and portable instruments ? palmtop computers and electronic planners simplified system diagram sl02009 v out shdn gnd on off b2 c out 1 m f c in 1 m f c3 a3 c1 a1 (5) (4) (2) (1) (3) v in dc 2.5 to 6.5 v preset output voltages: 2.5 v to 4.5 v c bypass (optional) bypass r load top view (wafer-level csp pin assignments using jedec standard matrix) (sot23-5 package pin assignments in parentheses .) figure 1. simplified system diagram.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 3 ordering information type number package temperature type number name description range max8877- xx d max8878- xx d so5 (sot23-5) plastic small outline package; 5 leads; body width 1.6 mm 40 c to +85 c max8877- xx uk max8878- xx uk wl-csp5 wafer-level, chip-scale package; 5 bumps 40 c to +85 c note: the device has nine (9) voltage options, indicated by the xx on the type number. device package preset output voltage device package preset output voltage max8877-25 so5 (sot23-5), wl-csp5 2.5 v max8878-25 so5 (sot23-5), wl-csp5 2.5 v max8877-26 so5 (sot23-5), wl-csp5 2.6 v max8878-26 so5 (sot23-5), wl-csp5 2.6 v max8877-27 so5 (sot23-5), wl-csp5 2.7 v max8878-27 so5 (sot23-5), wl-csp5 2.7 v max8877-28 so5 (sot23-5), wl-csp5 2.8 v max8878-28 so5 (sot23-5), wl-csp5 2.8 v max8877-30 so5 (sot23-5), wl-csp5 3.0 v max8878-30 so5 (sot23-5), wl-csp5 3.0 v max8877-33 so5 (sot23-5), wl-csp5 3.3 v max8878-33 so5 (sot23-5), wl-csp5 3.3 v max8877-36 so5 (sot23-5), wl-csp5 3.6 v max8878-36 so5 (sot23-5), wl-csp5 3.6 v max8877-42 so5 (sot23-5), wl-csp5 4.2 v max8878-42 so5 (sot23-5), wl-csp5 4.2 v max8877-45 so5 (sot23-5), wl-csp5 4.5 v max8878-45 so5 (sot23-5), wl-csp5 4.5 v marking code each device is marked with a four letter code. the first three letters designate the product. the fourth, represented by an `x' , designates the date tracking code. part marking part marking max8877 max8878 max8877-25d, uk amgx max8878-25d, uk apnx max8877-26d apbx max8878-26d, uk appx max8877-27d ankx max8878-27d, uk apjx max8877-28d, uk amhx max8878-28d, uk aprx MAX8877-30D, uk amjx max8878-30d, uk apsx max8877-33d, uk amkx max8878-33d, uk aptx max8877-36d, uk amlx max8878-36d, uk apux max8877-42d, uk ammx max8878-42d, uk apvx max8877-45d, uk amnx max8878-45d, uk apwx
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 4 pin configuration sl02010 1 2 34 5v out bypass shdn gnd v in max8877-xx max8878-xx d package uk package a3 a1 c3 c1 b2 v out v in gnd shdn bypass top view figure 2. pin configurations. pin description ball pin symbol description a1 1 v in regulator input. supply voltage ranges from 2.5 v to 6.5 v. bypass with a 1 m f capacitor to gnd. b2 2 gnd ground. the bump may also serve as heat spreader by soldering it to a large pcb pad or circuit board ground plane to maximize power dissipation. c1 3 shdn active-low shutdown input. this pin must be actively terminated. tie to v in if this function is not used. c3 4 bypass noise bypass pin. low noise of typically 30 m v rms with optional 0.01 m f bypass capacitor. larger bypass capacitor further reduces noise. a3 5 v out regulator output. sources up to 150 ma. minimum output capacitor is 1 m f. maximum ratings symbol parameter conditions min. max. unit v in input voltage 6.5 +6.5 v dc v shdn shdn to gnd voltage 6.5 +6.5 v dc v shdn v in shdn to v in voltage 6.5 +0.3 v dc v out , v bypass v out and bypass to gnd voltage 0.3 v in + 0.3 v dc t stg storage temperature range 65 +150 c t j junction temperature range 55 +140 c t amb ambient temperature range 40 +85 c p d power dissipation t amb = 25 c (derating factor above 25 c = 5.1 mw/ c) 637 mw notes: 1. maximum ratings are those values beyond which damage to the device may occur. exposure to these conditions or conditions beyo nd those indicated may adversely affect device reliability. functional operation under absolute maximum-rated condition is not imp lied.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 5 electrical characteristics v in = v out(nom) + 0.5 v; 40 c t amb +85 c unless otherwise noted. typical values are at t amb = +25 c. (see note 1.) symbol parameter conditions min. typ. max. unit v in input voltage 2.5 6.5 v output voltage accuracy i out = 0.1 ma; t amb = +25 c; v out 2.5 v 1.4 1.4 % i out = 0.1 ma to 150 ma; 40 c t amb +85 c; v out 2.5 v 3.0 2.0 % i out = 0.1 ma; t amb = +25 c; v out < 2.5 v 3.0 3.0 % i out = 1 ma to 150 ma; 40 c t amb +85 c; v out < 2.5 v 3.5 3.5 % i out(max) maximum output current 150 ma i lim current limit 160 390 ma i q ground pin current i out = 0 ma 85 180 m a i out = 150 ma 100 m a i rbc reverse battery current 0.5 m a d v lnr line regulation 2.5 v or (v out + 0.1 v) v in 6.5 v; i out = 1 ma 0.125 0 0.125 %/v d v ldr load regulation 0.1 ma i out ; c out = 1.0 m f 0.01 0.02 %/ma dropout voltage (note 2) i out = 1 ma 1.0 mv i out = 50 ma 41 90 mv i out = 150 ma 165 mv v n(o) output voltage noise c out = 10 m f 28 m v rms () c out = 100 m f 20 m v rms f = 10 hz to 100 khz; c 01 f c out = 10 m f 13 m v rms c bypass = 0.1 m f c out = 100 m f 12 m v rms shutdown v ih high-level shdn input threshold 2.5 v in 6.5 v 2.0 v v il lowlevel shdn input threshold 2.5 v in 6.5 v 0.4 v i shdn shdn input bias current v shdn = v in t amb = +25 c 100 m a i q(shdn ) shdn supply current v out = 0 v t amb = +25 c 0.01 1 m a t shdn delay shutdown exit delay (t3) c bypass = 0.01 m f; c 10 fld t amb = +25 c 30 150 m s y (note 3) c out = 1.0 m f; no load 40 c t amb +85 c 300 m s rsd resistance shutdown discharge max8878-xx only 300 w thermal protection t shdn thermal shutdown junction temperature 140 c d t shdn thermal shutdown hysteresis 15 c notes: 1. limits are 100% production tested at t amb = +25 c. limits over the operating temperature range are guaranteed through correlation using statistical quality control (sqc) methods. 2. the dropout voltage is defined as v in v out , when v out is 100 mv below the value of v out for v in = v out + 0.5 v. (only applicable for v out = +2.5 v to +4.5 v.) 3. time needed for v out to reach 95% of final value.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 6 typical performance curves max8877/max8878 with conditions: v in = v out(nom) + 0.5 v; t amb = 40 c to +85 c; c in = 1 m f, c out = 1 m f unless otherwise noted. typical values are at t amb = +25 c. output voltage (v) sl01711 output current (ma) 3.20 3.22 3.24 3.26 3.28 3.30 3.32 0 20 40 60 80 100 120 140 160 figure 3. output voltage versus output current. ground pin current ( a) m sl01712 output current (ma) 115 120 125 130 135 140 0 20 40 60 80 100 120 140 160 figure 4. gnd pin current versus output current. sl01713 input voltage (v) ground pin current ( a) m 0 20 40 60 80 100 120 140 160 0123456 figure 5. gnd pin current (no load) versus input voltage. output voltage (v) sl01714 input voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0123456 figure 6. output voltage (i out = 50 ma) versus input voltage. sl01719 input voltage (v) ground pin current ( a) m 20 0 20 40 60 80 100 120 140 160 0123456 figure 7. gnd pin current (50 ma) versus input voltage. sl01717 output current (ma) dropout voltage (mv) 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 figure 8. dropout voltage versus output current.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 7 typical performance curves (continued) sl01715 temperature ( c) 3.25 3.26 3.27 3.28 3.29 3.30 3.31 3.32 40 20 0 20 40 60 80 100 output voltage (v) figure 9. output voltage (50 ma load) versus temperature. sl01716 temperature ( c) ground pin current ( a) m 110 115 120 125 130 135 140 40 20 0 20 40 60 80 100 figure 10. gnd pin current (50 ma load) versus temperature. sl01718 input voltage (v) output voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 1.0 2.0 3.0 4.0 5.0 6.0 figure 11. output voltage (no load) versus input voltage. sl01720 output current (ma) +85 c +25 c 40 c 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 dropout voltage (mv) figure 12. dropout voltage versus output current.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 8 typical performance curves (continued) ( v / sl02011 frequency (hz) output noise spectral density 0.000 0.001 0.010 0.100 1.000 10.000 0.1 1 10 100 1000 c load = 10 m f c load = 1 m f m hz ) figure 13. output noise spectral density versus frequency. esr ( ) w c out sl01734 load current (ma) 0.0 0.1 1.0 10.0 100.0 0 50 100 150 c out = 10 m f c out = 1 m f stable region figure 14. region of stable c out esr versus load current. sl02012 frequency (hz) power supply rejection ratio (db) 0 10 20 30 40 50 60 70 80 c l 10 m f c l 1 m f 0.01 1 100 10000 1000000 figure 15. power supply rejection ratio versus frequency. sl02013 bypass capacitance (nf) output noise ( v ) 0 5 10 15 20 25 30 35 40 45 1 10 100 rms m figure 16. output noise versus bypass capacitance sl01730 output current (ma) output noise ( v ) m 25.2 25.3 25.3 25.4 25.4 25.5 1 10 100 1000 rms figure 17. output noise versus output current.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 9 typical performance curves (continued) c in = 1.0 m f i l = 050 ma v in = v out + 0.5 v c out = 1.0 m f sl01721 figure 18. load transient response (with power supply source). c in = 1.0 m f i l = 050 ma v in = v out + 0.5 v c out = 1.0 m f sl01722 figure 19. load transient response (with aa battery source). i l = 050 ma v in = near dropout condition c in = 1.0 m f c out = 1.0 m f sl01723 figure 20. load transient response. sl01724 i l = 50 ma 0.01 m f bypass capacitor figure 21. shutdown exit delay. i l = 0 ma 0.01 m f bypass capacitor sl01725 figure 22. entering shutdown (no load).
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 10 technical discussion the max8877/max8878-xx family are very low-noise, very low-dropout, low quiescent-current linear regulators designed for battery-powered applications, although they can also be used for devices powered by ac-dc converters. the voltage regulation components of the max8877/max8878-xx consist of a 1.23 v reference, an error amplifier, a p-channel pass transistor, and an internal feed-back voltage divider. the device also contains a reverse battery protection circuit, a thermal sensor, a current limiter, and shutdown logic. voltage regulation the 1.23 v bandgap reference is connected to the error amplifier's inverting input. the error amplifier compares this reference with the feedback voltage and amplifies the difference. if the feedback voltage is lower than the reference voltage, the pass-transistor gate is pulled lower, which allows more current to pass to the output and increases the output voltage. if the feedback voltage is too high, the pass-transistor gate is pulled up, allowing less current to pass to the output. the output voltage is fed back through an internal resistor voltage divider connected to the v out pin. the max8877/max8878-xx uses a 1.0 w typical p-channel mosfet pass transistor. the p-channel mosfet requires no base drive, therefore the device has lower quiescent current than a comparable pnp transistor-based design. the max8877/max8878-xx uses 100 m a of quiescent current under any load conditions. an optional external bypass capacitor connected between the bypass pin and ground reduces noise at the output. power dissipation the max8877/max8878's maximum power dissipation depends on the thermal resistance of the case and circuit board, the temperature difference between the die junction and ambient air, and the rate of air flow. the power dissipation across the device is p = i out (v in v out ). the maximum power dissipation is: p max = (t j t amb ) / ( q jb + q ba ) where t j t amb is the temperature difference between the max8877/max8878 die junction and the surrounding air, q jb (or q jc ) is the thermal resistance of the package, and q ba is the thermal resistance through the printed circuit board, copper traces, and other materials to the surrounding air. the gnd pin provides an electrical connection to ground and a path for heat transfer away from the junction. connect the gnd pin to ground using a large pad or ground plane to maximize heat transfer. noise reduction an optional external 0.01 m f bypass capacitor at bypass, in conjunction with an internal 200 w resistor, creates an 80 hz low-pass filter for noise reduction. the max8877/max8878 produces 30 m v rms of output voltage noise with c bypass = 0.01 m f and c out = 10 m f. this is negligible in most applications. start-up time is minimized by a power-on circuit that pre-charges the bypass capacitor. the `typical performance curves' section shows graphs of `output noise versus bypass capacitance' (figure 16), `output noise versus output current' (figure 17), and `output noise spectral density versus frequency' (figure 13). device protection the max8877/max8878-xx has several built-in protection circuits. current limiter : the current limiter controls the the pass transistor's gate voltage so the output current cannot exceed 390 ma. we recommend using 160 ma minimum to 500 ma maximum in the design parameters. because of the current limiter, the output can be shorted to ground for an indefinite amount of time with no damage to the part. reverse battery protection : the reverse battery protection circuit prevents damage to the device if the supply battery is accidentally installed backwards. this circuit compares v in and v shdn to ground and disconnects the device's internal circuits if it detects reversed polarity. reverse supply current is limited to 1 ma when this protective circuit is active, preventing the battery from rapidly discharging through the device. thermal overload protection : when the junction temperature exceeds +140 c, the thermal sensor signals the shutdown logic to turn off the pass transistor. after the junction temperature has cooled by 15 c the sensor signals the shutdown logic to turn the pass transistor on again. this will create a pulsed output during lengthy thermal overloads. note: thermal overload protection is to protect the device during fault conditions. do not exceed the maximum junction-temperature rating of t j = +150 c during continuous operation.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 11 application information capacitor selection and regulator stability normally, use a 1 m f capacitor on the max8877/max8878-xx input and a 1 m f to 10 m f capacitor on the output. to improve the supply-noise rejection and line-transient response, use input capacitor values and lower esrs. to reduce noise and improve load-transient response, stability, and power-supply rejection, use use large output capacitors. for stable operation over the full temperature range and with load currents up to 150 ma, a 1 m f (min.) ceramic capacitor is recommended. note that some ceramic dielectrics exhibit large capacitance and esr variation with temperature. with dielectrics such as z5u and y5v, it may be necessary to increase the capacitance by a factor of 2 or more to ensure stability at temperatures below 10 c. with x7r or x5r dielectrics, 1 m f should be sufficient at all operating temperatures for v out = 2.5 v. a graph of the region of stable c out esr versus load current is shown in figure 14. use a 0.01 m f bypass capacitor at bypass pin for low output voltage noise. increasing the capacitance will slightly decrease the output noise, but increase the start-up time. values above 0.1 m f provide no performance advantage and are not recommended (see figures 21 and 22 in the `typical performance curves'). load-transient considerations the max8877/max8878 load-transient response graphs (figures 18, 19, and 20) show two components of the output response: a dc shift from the output impedance due to the load current change, and the transient response. typical transient for a step change in the load current from 0 ma to 50 ma is 40 mv. increasing the output capacitor's value and decreasing the esr attenuates the overshoot. psrr and operation from sources other than batteries the max8877/max8878 is designed to deliver low dropout voltages and low quiescent currents in battery-powered systems. when operating from sources other than batteries, improved supply-noise rejection and transient response can be achieved by increasing the values of the input and output bypass capacitors, and through passive filtering techniques. power-supply rejection is 73 db at low frequencies and rolls off above 10 khz. see figure 15, `power supply rejection ratio versus frequency'. input-output (dropout) voltage for output voltage greater than the minimum input voltage (2.5 v), the regulator's minimum input-output voltage differential (or dropout voltage) determines the lowest usable supply voltage. in battery-powered systems, this will determine the useful end-of-life battery voltage. because the max8877/max8878 uses a p-channel mosfet pass transistor, the dropout voltage is a function of drain-to-source on-resistance (r ds(on) ) multiplied by the load current (see `typical performance curves').
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 12 packing method printed plano box tape guard band barcode label esd embossed reel assembly space for additional label printed esd warning barcode label qa seal printed plano box pre-printed hyatt patent sl02060 figure 23. wl-csp5 tape and reel packing method.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 13 sl02056 4.00 p 1.75 ao loaded tape direction of feed notes: all dimensions in millimeters. 10 sprocket hole pitch cumulative tolerance 0.20 material: conductive polystyrene camber not to exceed 1.0 mm in 100 mm. cover tape shown for illustrative purposes only. 2.00 0.01 w 3.50 0.01 top cover tape center lines of cavity x ? 1.5 +0.1 +0.0 x bottom cover tape bo section `x x' bottom cover tape top cover tape t t1 t1 dimensions (mm are the original dimensions) unit ao bo t t1 p w mm 1.09 0.99 1.598 1.498 0.76 0.74 0.10 (max.) 4.05 3.95 8.3 7.9 heat seal cover tape for carrier tape width 8 mm type tape: clear static dissipative tape base material: transparent polyester cover tape width: 5.3 0.1 mm cover tape length: 480 m/reel supplier: advanced integrated materials (aim) part number: ct5005300480 figure 24. wl-csp5 tape dimensions.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 14 sot23-5: plastic small outline package; 5 leads; body width 1.5 mm 1.35 1.2 1.0 0.25 0.55 0.41 0.22 0.08 3.00 2.70 1.70 1.50 0.55 0.35 0.15 0.05
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 15 wl-csp5: wafer level, chip-scale package; 5 bumps x1 x5 x2 x3 x4 x6 x7 bump dimensions (mm are the original dimensions) unit x1 x2 x3 x4 x5 x6 x7 mm 1.30 1.24 0.87 0.81 0.5 0.5 0.195 0.165 0.467 0.447 0.145 0.115 sl02055 revision history rev date description _3 20030808 product data (9397 750 11891); ecn 853-2412 30183 dated 04 august 2003. supersedes data of 2003 may 14 (9397 750 11487). modifications: ? add `marking code' table to ordering information on page 3. ? electrical characteristics table on page 5: symbol i shdn : condition tamb = +25 5c: change typ. value from `0.01 m a' to `' remove condition `t amb = +85 c' and its limits. symbol i q(shdn ) : remove condition `t amb = +85 c' and its limits. _2 20030514 product data (9397 750 11487); ecn 853-2412 29830 dated 17 april 2003. supersedes data of 2003 mar 28 (9397 750 10896). _1 20030328 product data (9397 750 10896); ecn 853-2412 29449 dated 31 january 2003.
philips semiconductors product data max8877/max8878-xx very low noise, very low dropout, 150 ma linear regulator, cmos process technology 2003 aug 08 16 definitions short-form specification e the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed i nformation see the relevant data sheet or data handbook. limiting values definition e limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the l imiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any o ther conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affec t device reliability. application information e applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors ma ke no representation or warranty that such applications will be suitable for the specified use without further testing or modificatio n. disclaimers life support e these products are not designed for use in life support appliances, devices, or systems where malfunction of these products ca n reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applica tions do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes e philips semiconductors reserves the right to make changes in the productseincluding circuits, standard cells, and/or softwaree described or contained herein in order to improve design and/or performance. when the product is in full production (status `production') , relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for th e use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranti es that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . ? koninklijke philips electronics n.v. 2003 all rights reserved. printed in u.s.a. date of release: 08-03 document order number: 9397 750 11891

data sheet status [1] objective data preliminary data product data product status [2] [3] development qualification production definitions this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice. this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change notification (cpcn). data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level i ii iii

▲Up To Search▲

Price & Availability of MAX8877-30D

	To Download MAX8877-30D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .